型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 小信号二极管描述: Rectifier Diode, 1 Phase, 1Element, 50A, 1200V V(RRM), Silicon, 5.50 X 5.5MM, DIE-196215+￥19.062850+￥18.2482200+￥17.7920500+￥17.67791000+￥17.56392500+￥17.43355000+￥17.35207500+￥17.2706 -
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品类: TVS二极管描述: Rectifier Diode, 1 Phase, 1Element, 75A, 1200V V(RRM), Silicon, 7.50 X 7.5MM, DIE-199255+￥35.013450+￥33.5171200+￥32.6792500+￥32.46971000+￥32.26022500+￥32.02085000+￥31.87127500+￥31.7216 -
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品类: TVS二极管描述: Rectifier Diode, 1 Phase, 1Element, 35A, 1200V V(RRM), Silicon, 3.50 X 6.5MM, DIE-162105+￥14.275250+￥13.6651200+￥13.3235500+￥13.23811000+￥13.15272500+￥13.05515000+￥12.99417500+￥12.9331 -
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品类: TVS二极管描述: 在EMCON 3 - 技术温度系数小的快速开关二极管芯片 Fast switching diode chip in EMCON 3 -Technology small temperature coefficient1252 -
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品类: TVS二极管描述: Rectifier Diode, 1 Phase, 1Element, 50A, 1200V V(RRM), Silicon, 6.50 X 6.5MM, DIE-116855+￥26.766150+￥25.6222200+￥24.9817500+￥24.82151000+￥24.66142500+￥24.47845000+￥24.36407500+￥24.2496 -
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品类: TVS二极管描述: Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.75291+￥61.742410+￥59.0579100+￥58.5747250+￥58.1989500+￥57.60831000+￥57.33992500+￥56.96405000+￥56.6419 -
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品类: TVS二极管描述: Rectifier Diode, 1 Phase, 1Element, 75A, 1700V V(RRM), Silicon, 6.80 X 6.8MM, DIE-148101+￥38.486110+￥36.2779100+￥34.6375250+￥34.3851500+￥34.13281000+￥33.84892500+￥33.59655000+￥33.4388 -
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品类: TVS二极管描述: 碳化硅肖特基二极管 Silicon Carbide Schottky Diode98391+￥41.847210+￥39.4462100+￥37.6625250+￥37.3881500+￥37.11371000+￥36.80502500+￥36.53065000+￥36.3591 -
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品类: TVS二极管描述: 碳化硅肖特基二极管 Silicon Carbide Schottky Diode54421+￥39.364510+￥37.1059100+￥35.4281250+￥35.1699500+￥34.91181000+￥34.62142500+￥34.36335000+￥34.2020 -
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品类: TVS二极管描述: INFINEON ESD112-B1-02ELS E6327 TVS二极管, ESD112-B1-02系列, 双向, 5.3 V, 21 V, TSSLP-2-4, 2 引脚577420+￥0.324050+￥0.3000100+￥0.2880300+￥0.2784500+￥0.27121000+￥0.26645000+￥0.261610000+￥0.2568 -
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品类: 肖特基二极管描述: DD 系列，Infineon **Infineon** PowerBLOCK 双二极管（**DD 系列**）整流器二极管模块具有如下配置：快速二极管和整流器二极管。 压力触点技术整流器二极管模块的范围为 20mm 直到 60mm，电压范围高达 1800V，电流最大 600A。 PowerBLOCK 整流器二极管具有电气绝缘基座，其包含隔离的铜基板。 它们可用于电源控制器、软启动器和驱动应用。 PowerBLOCK 外壳 易于安装 压力触点技术 故障保护/故障时短路 - 防止故障时出现电弧 ### 二极管和整流器，Infineon25021+￥514.884910+￥501.453150+￥491.1554100+￥487.5736200+￥484.8873500+￥481.30551000+￥479.06682000+￥476.8282 -
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品类: TVS二极管描述: ESD 保护器，Infineon Infineon 瞬态电压抑制 (TVS) 二极管适用于需要高速 ESD 保护的应用 ### 瞬态电压抑制器，Infineon458620+￥0.363250+￥0.3363100+￥0.3228300+￥0.3120500+￥0.30401000+￥0.29865000+￥0.293210000+￥0.2878 -
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品类: TVS二极管描述: ESD 保护器，Infineon Infineon 瞬态电压抑制 (TVS) 二极管适用于需要高速 ESD 保护的应用 ### 瞬态电压抑制器，Infineon392110+￥1.159750+￥1.0995100+￥1.0566300+￥1.0308500+￥1.00501000+￥0.97932500+￥0.94065000+￥0.9320 -
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品类: TVS二极管描述: Diode Schottky 1.2kV 7.5A 2Pin Die24581+￥159.638410+￥155.473950+￥152.2812100+￥151.1706200+￥150.3377500+￥149.22721000+￥148.53312000+￥147.8390 -
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品类: TVS二极管描述: Diode Schottky 100V 60A 3Pin SMD-120321+￥1941.669410+￥1924.017925+￥1915.192150+￥1906.3663100+￥1897.5406150+￥1888.7148250+￥1879.8890500+￥1871.0632 -
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品类: 功率二极管描述: Bridge Rectifier; Package: PG-SOT143-4; Configuration: bridge; VR (max): 40V; IF (max): 200mA; IR (max): 10uA; VF (max): 0.62V;7093 -
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品类: 功率二极管描述: Diode: Schottky rectifying; SMD; 30V; 0.9A; SOT14334865+￥4.237725+￥3.923850+￥3.7040100+￥3.6099500+￥3.54712500+￥3.46865000+￥3.437210000+￥3.3901 -
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品类: 肖特基二极管描述: Infineon ### 二极管和整流器，Infineon60255+￥2.196525+￥2.033850+￥1.9199100+￥1.8711500+￥1.83852500+￥1.79785000+￥1.781610000+￥1.7572 -
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品类: 二极管阵列描述: INFINEON BAV 199 E6327 二极管 小信号, AEC-Q101, 双隔离, 75 V, 200 mA, 1.1 V, 600 ns, 4.5 A420720+￥0.167450+￥0.1550100+￥0.1488300+￥0.1438500+￥0.14011000+￥0.13765000+￥0.135210000+￥0.1327 -
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品类: TVS二极管描述: INFINEON ESD114U102ELSE6327XTSA1 静电保护装置, 21 V, TSSLP-2-3, 2 引脚 新24225+￥2.471925+￥2.288850+￥2.1606100+￥2.1057500+￥2.06902500+￥2.02335000+￥2.004910000+￥1.9775 -
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品类: 小信号二极管描述: Rectifier Diode, 1 Phase, 1Element, 15A, 1200V V(RRM), Silicon, 3.20 X 3.2MM, DIE-1925010+￥7.9512100+￥7.5536500+￥7.28861000+￥7.27532000+￥7.22235000+￥7.15617500+￥7.103110000+￥7.0766 -
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品类: TVS二极管描述: Emitter Controlled Diode is Infineon"s unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.91191+￥60.770610+￥57.2838100+￥54.6936250+￥54.2951500+￥53.89661000+￥53.44832500+￥53.04985000+￥52.8007
